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| SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) -60 TO 220AB TO 263 G DRAIN connected to TAB GDS Top View SUB65P06 20 D P Channel MOSFET rDS(on) (W) 0.020 ID (A) -65a S GD S Top View SUP65P06 20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c TC = 25_C TC = 125_C Symbol VGS ID IDM IAR EAR PD TJ, Tstg Limit "20 -65a -39 -200 -60 180 187d 3.7 -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction to Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289. A SPICE Model data sheet is available for this product (FaxBack document #70543). RthJA RthJC 62.5 0.8 Symbol RthJA Limit 40 Unit _C/W Siliconix P-39628--Rev. A, 28-Dec-94 1 SUP/SUB65P06-20 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -60 V, VGS = 0 V, TJ = 125_C VDS = -60 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Resistanceb rDS(on) VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -10 V, ID = -30 A, TJ = 175_C Forward Transconductance b gfs VDS = -15 V, ID = -30 A 25 -120 0.017 0.020 0.033 0.042 S W -60 V -2.0 -3.0 -4.0 "100 -1 -50 -150 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamica Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -30 V, RL = 0.47 W , ID ] -65 A, VGEN = -10 V, RG = 2.5 W VDS = -30 V, VGS = -10 V, ID = -65 A VGS = 0 V, VDS = -25 V, f = 1 MHz 4500 870 350 85 24 22 15 40 65 30 40 80 120 60 ns 120 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)a Continuous Current Pulsed Current Forward Voltageb Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = -65 A, di/dt = 100 A/ms IF = -65 A, VGS = 0 V -1.1 70 7 0.245 -65 A -200 -1.4 120 9 0.54 V ns A mC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2 Siliconix P-39628--Rev. A, 28-Dec-94 SUP/SUB65P06-20 Typical Characteristics (25_C Unless Noted) Output Characteristics 200 VGS = 10, 9, 8 V 7V 160 I D - Drain Current (A) I D - Drain Current (A) 160 25_C 120 125_C TC = -55_C 200 Transfer Characteristics 120 6V 80 5V 40 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 80 40 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Transconductance 100 0.030 0.025 rDS(on) - On-Resistance ( W ) 0.020 0.015 On-Resistance vs. Drain Current 80 g fs - Transconductance (S) TC = -55_C 25_C 125_C 60 VGS = 10 V 40 VGS = 20 V 0.010 0.005 0 20 0 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) 0 20 40 60 80 100 ID - Drain Current (A) 20 VGS - Gate-to-Source Voltage (V) 6000 5000 C - Capacitance (pF) 4000 3000 2000 1000 0 0 10 20 Crss Capacitance Gate Charge Ciss 16 VDS = 30 V ID = 65 A 12 8 Coss 4 0 30 40 50 60 0 25 50 75 100 125 150 175 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Siliconix P-39628--Rev. A, 28-Dec-94 3 SUP/SUB65P06-20 Typical Characteristics (25_C Unless Otherwise Noted) 2.5 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 30 A I S - Source Current (A) Source-Drain Diode Forward Voltage rDS(on) - On-Resistance ( W ) (Normalized) 2.0 1.5 TJ = 150_C TJ = 25_C 10 1.0 0.5 0 -50 -25 1 0 25 50 75 100 125 150 175 0.3 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Thermal Ratings 80 Maximum Avalanche and Drain Current vs. Case Temperature 500 Safe Operating Area 10 ms 100 ms 1 ms 100 I D - Drain Current (A) I D - Drain Current (A) 60 Limited by rDS(on) 40 10 10 ms 100 ms dc TC = 25_C Single Pulse 20 1 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) 4 Siliconix P-39628--Rev. A, 28-Dec-94 |
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